"Writing-reading-erasing" on tungsten oxide films using the scanning electrochemical microscope.

Citation:

Turyan I, Krasovec UO, Orel B, Saraidorov T, Reisfeld R, Mandler D. "Writing-reading-erasing" on tungsten oxide films using the scanning electrochemical microscope. Adv. Mater. (Weinheim, Ger.)Advanced Materials (Weinheim, Germany). 2000;12 (5) :330 - 333.

Date Published:

2000///

Abstract:

The authors described fast electrochem.-spectroscopic "writ- ing-reading-erasing" system based on a scanning probe technique. The fast "reading" and "erasing" processes are due to the fact that there is no phase transition between the two states and that the ingression and egression of ions is very fast. In principle, the resoln. of patterning depends on the size of the microelectrodes, which currently can be reduced to the nanometer range. The uniqueness of this system is that the propagation of the lateral charge inside the thin film can be detected independently of its formation. This allows the study of lateral charge transport and enables the development of better systems in terms of resoln. and information storage capabilities. [on SciFinder(R)]

Notes:

CAPLUS AN 2000:451474(Journal)