Dual Role of Cu‐Chalcogenide as Hole‐Transporting Layer and Interface Passivator for p–i–n Architecture Perovskite Solar Cell (Adv. Funct. Mater. 38/2021)

Citation:

Sadhu A, Rai M, Salim T, Jin X, Tan JMR, Leow SW, Ahmed MG, Magdassi S, Mhaisalkar SG, Wong LH. Dual Role of Cu‐Chalcogenide as Hole‐Transporting Layer and Interface Passivator for p–i–n Architecture Perovskite Solar Cell (Adv. Funct. Mater. 38/2021). Advanced Functional Materials [Internet]. 2021;31 (38) :2170282 - 2170282.

Date Published:

2021/09//

Abstract:

Hole-Transporting Layers In article number 2103807, Lydia Helena Wong and co-workers use Al-doped CuS as a hole transport layer (HTL) for perovskite solar cells. Here, it has been demonstrated that, due to the interaction between sulfur and lead, better perovskite crystallization takes place at the interface. Because of this improved interface quality, the sulfide-HTL based devices outperform the oxide HTL-based devices in terms of ambient stability.

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