Fabrication of transparent conducting films composed of In3+ doped CuS and their application in flexible electroluminescent devices.

Citation:

Patel DK, Kamyshny A, Ariando, Zhen H, Magdassi S. Fabrication of transparent conducting films composed of In3+ doped CuS and their application in flexible electroluminescent devices. J. Mater. Chem. CJournal of Materials Chemistry C: Materials for Optical and Electronic Devices. 2015;3 (33) :8700 - 8705.

Date Published:

2015///

Abstract:

Transparent conductive films composed of CuS were formed by wet deposition on PET at room temp. followed by annealing at 100° for 1 h. The resistance of the films was tuned by doping with In3+. A decrease of over an order of magnitude of the sheet resistance was obtained, from 1721 Ω sq-1 for undoped CuS film to 109 Ω sq-1 for In3+ doped. Transparency of the conducting films could be tuned by an appropriate selection of reaction time and In3+ concn. Films contg. 10 mol% of In3+ ions after a reaction duration of 24 h have a sheet resistance of ∼270 Ω sq-1 and a transparency of ∼80%. The fabricated films are characterized by excellent adhesion to the PET substrate and are suitable for use as transparent conducting electrodes (TCE) in flexible electroluminescent (EL) devices. [on SciFinder(R)]

Notes:

CAPLUS AN 2015:1243287(Journal; Online Computer File)