@article { ISI:000274179900067,
	title = {Ternary logic implemented on a single dopant atom field effect silicon transistor},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {96},
	year = {2010},
	month = {JAN 25},
	abstract = {We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through the device and the transconductance. A read out procedure that allows for voltage gain is proposed. Long numbers can be multiplied by addressing a sequence of Fin-FET transistors in a row.},
	issn = {0003-6951},
	doi = {10.1063/1.3297906},
	author = {Klein, M. and Mol, J. A. and Verduijn, J. and Lansbergen, G. P. and Rogge, S. and LEVINE, RD and Remacle, F.}
}
