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Ternary logic implemented on a single dopant atom field effect silicon transistor

Citation:

Klein M, Mol JA, Verduijn J, Lansbergen GP, Rogge S, LEVINE RD, Remacle F. Ternary logic implemented on a single dopant atom field effect silicon transistor. APPLIED PHYSICS LETTERS. 2010;96.

Date Published:

JAN 25

Abstract:

We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through the device and the transconductance. A read out procedure that allows for voltage gain is proposed. Long numbers can be multiplied by addressing a sequence of Fin-FET transistors in a row.