2012

H. Ilan, S. Frishman, and A. J. Agranat, “Investigation of the conduction in an implanted layer of protons in a potassium lithium tantalate niobate substrate.,” Applied Physics Letters, vol. 101, no. 14, pp. 141111, 2012. Publisher's VersionAbstract
The electrical conductivity in the amorphous layer formed by the implantation of protons at 1.15 MeV with fluence of 1.1×1017 ions/cm2 within the depth of potassium lithium tantalate niobate is investigated by four probes and Hall effect measurements. It is shown that the conductivity originates from electrons that are induced by 'Hydrogen donors' that reside in a band structure 0.22 eV below the conduction band. It is claimed that this phenomenon enables the construction of conductive structures with submicron features within the depth of the substrate that can be used as embedded electrodes in electrooptical devices integrated in this substrate. [ABSTRACT FROM AUTHOR]Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
H. Ilan and A. J. Agranat, “Electrically controlled absorption in a slab waveguide formed by the implantation of protons in a potassium lithium tantalate niobate substrate.,” Applied Physics Letters, vol. 101, no. 26, pp. 261101, 2012. Publisher's VersionAbstract
Electrically controlled absorption was observed in a slab waveguide, fabricated in a potassium lithium tantalate niobate substrate by proton implantation, at an energy of E=1.15 MeV and a fluence of 6.1×1016ions/cm2. The implantation created an amorphous layer which acted as the cladding with an adjacent proton doped layer at its bottom. It is suggested that a n-i junction is formed at the interface between the proton layer and the substrate, which is the core of the waveguide. The electrically controlled absorption is attributed to changes in the width of the depletion area of the n-i junction induced by the applied field. [ABSTRACT FROM AUTHOR]Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)